- Vgs - Gate-Source Voltage :
- Length :
- Height :
- Fall Time :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Rise Time | Fall Time | Transistor Type | Package | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Installation style | Factory packaging quantity | unit weight | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | |
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GET PRICE |
11,150
In-stock
|
onsemi | MOSFET 30V Dual SyncFET | 16 V, 20 V | SO-8 | - 55 C | + 150 C | Cut Tape | 2 Channel | 4.9 mm | 3.9 mm | 1.75 mm | 2 W | Dual | Si | N-Channel | 6.5 A | 29 mOhms | Enhancement | 4.5 ns, 5 ns | 2.5 ns, 11 ns | 2 N-Channel | 20 ns, 25 ns | 7 ns, 8 ns | |||||||||||||
|
GET PRICE |
22,500
In-stock
|
onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | SMD/SMT | 2500 | 338 mg | 30 V | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns |