semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Series	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	Rise Time	Fall Time	Transistor Type	Package	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Product Category	Installation style	Factory packaging quantity	unit weight	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Widt
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...		30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C		Reel	1 Channel	4.6 mm	2.5 mm	1.6 mm	40 W	Single	Si	N-Channel	500 V	12 A	520 mOhms	Enhancement	22 ns	36 ns	1 N-Channel
	2SK2998		GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal	30 V	Through Hole	TO-92-3	- 55 C	+ 150 C			1 Channel	5.1 mm	4.1 mm	8.2 mm	900 mW	Single	Si	N-Channel	500 V	500 mA	18 Ohms	Enhancement		11 ns
	2SK3131		GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...		30 V	Through Hole	TO-3PL-3	- 55 C	+ 150 C		Reel	1 Channel	20 mm	5 mm	26 mm	250 W	Single	Si	N-Channel	500 V	50 A	110 mOhms	Enhancement	105 ns	65 ns			51 ns	20 ns	MOSFET
	ISL9N310AS3	Per Unit $1.700		PDF RFQ	24,907 In-stock	onsemi	MOSFET N-Ch LL UltraFET PWM Optimized		20 V			- 55 C	+ 175 C	ISL9N310		1 Channel	10.29 mm		7.88 mm		Single	Si	N-Channel				Enhancement	52 ns	36 ns	1 N-Channel	Tube				Through Hole	50	2.387 g	30 V	62 A	15 mOhms	70 W	39 ns	11 ns	4.83 mm

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