- Manufacture :
- Gain Bandwidth Product fT :
- Package :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Maximum Operating Temperature | Configuration | Transistor Polarity | Gain Bandwidth Product fT | Product Type | Package | Subcategory | Product Category | Installation style | Factory packaging quantity | unit weight | RoHS | Pd-power dissipation | Collector-emitter maximum voltage VCEO | Collector - base voltage VCBO | Emitter - base voltage VEBO | Collector continuous current | DC Collector / Base Gain hfe Min | |
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13,500
In-stock
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Shindengen | Bipolar Transistor - Bipolar Junction Transistor (BJT) | + 150 C | NPN | 13 MHz | BJTs - Bipolar Transistors | Transistors | Through Hole | 50 | 2.300 g | N | 45 W | 400 V | 500 V | 7 V | 8 A | ||||||||
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10,000
In-stock
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Toshiba | Silicon NPN Triple Diffused Type Power Amplifier Applications | Triple | NPN | 30 MHz | BJTs - Bipolar Transistors | Cut Tape | Bipolar Transistor - Bipolar Junction Transistor (BJT) | Through Hole | 2000 | 100 W | 140 V | 5 V | 10 A | 55 |