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Gain Bandwidth Product fT :
Factory packaging quantity :
Pd-power dissipation :
Collector-emitter maximum voltage VCEO :
Emitter - base voltage VEBO :
Collector continuous current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Maximum Operating Temperature Configuration Transistor Polarity Gain Bandwidth Product fT Product Type Package Subcategory Product Category Installation style Factory packaging quantity unit weight RoHS Pd-power dissipation Collector-emitter maximum voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO Collector continuous current DC Collector / Base Gain hfe Min
2SC4834
Per Unit
$1.200
RFQ
13,500
In-stock
Shindengen Bipolar Transistor - Bipolar Junction Transistor (BJT) + 150 C   NPN 13 MHz BJTs - Bipolar Transistors   Transistors   Through Hole 50 2.300 g N 45 W 400 V 500 V 7 V 8 A  
2SC5198
Per Unit
$1.200
RFQ
10,000
In-stock
Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications   Triple NPN 30 MHz BJTs - Bipolar Transistors Cut Tape   Bipolar Transistor - Bipolar Junction Transistor (BJT) Through Hole 2000     100 W 140 V   5 V 10 A 55
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