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- Transistor Polarity :
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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Gain Bandwidth Product fT | Vds - Drain-Source Breakdown Voltage | Rds On - Drain-Source Resistance | Channel Mode | Rise Time | Fall Time | Transistor Type | Product Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | unit weight | Factory Pack Quantity | RoHS | Id - Continuous Drain Curren | Pd-power dissipation | Collector-emitter maximum voltage VCEO | Collector - base voltage VCBO | Emitter - base voltage VEBO | Collector continuous current | |
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13,500
In-stock
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Shindengen | Bipolar Transistor - Bipolar Junction Transistor (BJT) | + 150 C | NPN | 13 MHz | BJTs - Bipolar Transistors | Transistors | 2.300 g | N | 45 W | 400 V | 500 V | 7 V | 8 A | |||||||||||||||||||||||||
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GET PRICE |
50,000
In-stock
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onsemi | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | 16 V | Through Hole | - 40 C | + 150 C | Tube | 1 Channel | 6.8 mm | 2.5 mm | 6.3 mm | 225 W | Single | Si | N-Channel | 30 V | 5.5 mOhms | Enhancement | 145 ns, 55 ns | 18 ns | 1 N-Channel | 30 ns, 40 ns | 22 ns, 14 ns | 0.084199 oz | 50 | N | 75 A |