semiconductors-Integrated Circuits - ICs

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PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Channel Mode	Rise Time	Fall Time	Transistor Type	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Factory Pack Quantity
2SK2842	GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...	30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C	Reel	1 Channel	4.6 mm	2.5 mm	1.6 mm	40 W	Single	Si	N-Channel	500 V	12 A	520 mOhms		Enhancement	22 ns	36 ns	1 N-Channel			50
TPCS8204	GET PRICE	PDF RFQ	45,000 In-stock	Toshiba Semiconductor	MOSFET	12 V	SMD/SMT	TSSOP-Advance-8	- 55 C	+ 150 C		2 Channel	3.65 mm	3.5 mm	0.75 mm	1.1 W	Dual	Si	N-Channel	20 V	6 A	17 mOhms		Enhancement	5 ns	10 ns
SSM3K35FS(T5L,F,T)	GET PRICE	PDF RFQ	40,000 In-stock	Toshiba Semiconductor	MOSFET	4 V	SMD/SMT			+ 150 C		1 Channel	1.6 mm	0.8 mm	0.7 mm	100 mW	Single	Si	N-Channel	20 V	180 mA	3 Ohms	400 mV	Enhancement			1 N-Channel	300 ns	115 ns

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