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20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Operating Supply Voltage | Memory Size | Maximum Clock Frequency | Interface Type | Organization | Supply Current - Max | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,775
In-stock
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Toshiba | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | TC58NVG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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551
In-stock
|
Toshiba | EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NVG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
|
1,065
In-stock
|
Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
|
392
In-stock
|
Toshiba | EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58BYG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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475
In-stock
|
Toshiba | EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NYG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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413
In-stock
|
Toshiba | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58BYG2S0 | Tray | 1.8 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
|
354
In-stock
|
Toshiba | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58NYG2S0 | Tray | 1.8 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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107
In-stock
|
Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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349
In-stock
|
Toshiba | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NVG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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75
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
|
156
In-stock
|
Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TFBGA-63 | - 40 C | + 85 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
|
180
In-stock
|
Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TFBGA-63 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
|
140
In-stock
|
Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
|
359
In-stock
|
Toshiba | EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NYG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
|
96
In-stock
|
Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58BVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | ||||
|
96
In-stock
|
Toshiba | EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58BVG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
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2
In-stock
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Toshiba | EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58NVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | ||||
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51
In-stock
|
Toshiba | EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | TC58NVG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
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VIEW | Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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VIEW | Toshiba | EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TH58NVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA |