- Length :
- Width :
- Pd - Power Dissipation :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Rise Time | Fall Time | Transistor Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Factory Pack Quantity | |
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GET PRICE |
6,551
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | ||||||
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GET PRICE |
40,000
In-stock
|
Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns |