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- Minimum Operating Temperature :
- Length :
- Width :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | DC Collector/Base Gain hfe Min | Continuous Collector Current | Rise Time | Fall Time | Transistor Type | Product Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Product Category | Factory packaging quantity | unit weight | Factory Pack Quantity | RoHS | Id - Continuous Drain Curren | DC Current Gain hFE Max | |
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GET PRICE |
8,755
In-stock
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Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns | ||||||||||||||||||||||
|
GET PRICE |
23,511
In-stock
|
Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | ||||||||||||||||||
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GET PRICE |
50,000
In-stock
|
onsemi | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | 16 V | Through Hole | - 40 C | + 150 C | Tube | 1 Channel | 6.8 mm | 2.5 mm | 6.3 mm | 225 W | Single | Si | N-Channel | 30 V | 5.5 mOhms | Enhancement | 145 ns, 55 ns | 18 ns | 1 N-Channel | 30 ns, 40 ns | 22 ns, 14 ns | 0.084199 oz | 50 | N | 75 A | ||||||||||||||||
|
GET PRICE |
8,623
In-stock
|
Toshiba | Through Hole | + 150 C | 100 W | Single | Si | PNP | - 140 V | - 5 V | 2 V | 30 MHz | 35 | 10 A | BJTs - Bipolar Transistors | 4000 | 83 |