- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Series :
-
- DS2431G (2)
- DS2431GA (2)
- DS24B33 (1)
- DS24B33S (2)
- DS28E01G (1)
- DS28E01P (1)
- DS28E15Q (1)
- DS28E22 (2)
- DS28E22Q (2)
- DS28E25 (2)
- DS28E25Q (2)
- DS28EL15 (1)
- DS28EL22 (2)
- DS28EL25 (2)
- TC58BVG0S3 (1)
- TC58BVG2S0 (3)
- TC58BYG1S3 (1)
- TC58BYG2S0 (1)
- TC58NVG0S3 (2)
- TC58NVG1S3 (2)
- TC58NVG2S0 (4)
- TC58NYG0S3 (1)
- TC58NYG1S3 (1)
- TC58NYG2S0 (1)
- TH58BVG3S0 (1)
- TH58NVG3S0 (2)
- Packaging :
- Operating Supply Voltage :
- Memory Size :
- Interface Type :
- Supply Current - Max :
- Data Retention :
- Applied Filters :
43 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Operating Supply Voltage | Memory Size | Maximum Clock Frequency | Interface Type | Organization | Supply Current - Max | Data Retention | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,026
In-stock
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Maxim Integrated | EEPROM 1-Wire 4kbit EEPROM | SMD/SMT | SO-8 | - 40 C | + 85 C | DS24B33S | Tube | 2.8 V to 5.25 V | 4 kbit | - | Serial, 1-Wire, SDQ | 256 x 16 | 20 mA | 40 Year | |||
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GET PRICE |
1,330
In-stock
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Maxim Integrated | EEPROM 1-Wire 4kbit EEPROM | Through Hole | TO-92-3 | - 40 C | + 85 C | DS24B33 | Reel | 2.8 V to 5.25 V | 4 kbit | - | Serial, 1-Wire, SDQ | 256 x 16 | 20 mA | 40 Year | ||
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664
In-stock
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Maxim Integrated | EEPROM 1-WIRE 1.8V 4KB EEPROM WITH SHA-256 TDFN | SMD/SMT | TDFN-6 | - 40 C | + 85 C | DS28EL25 | Reel | 1.8 V | 4 kbit | - | Serial, 1-Wire, SDQ | 256 x 16 | 1 mA | 10 Year | |||
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932
In-stock
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Maxim Integrated | EEPROM 1 WIRE 2KB E2 LOW VOLTAGE WITH SHA-256 TD... | SMD/SMT | TDFN-6 | - 40 C | + 85 C | DS28EL22 | Reel | 1.8 V | 2 kbit | - | Serial, 1-Wire, SDQ | 256 x 8 | 1 mA | 10 Year | |||
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713
In-stock
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Maxim Integrated | EEPROM 1-WIRE 1.8V 512B EEPROM WITH SHA-256 TDFN | SMD/SMT | TDFN-6 | - 40 C | + 85 C | DS28EL15 | Cut Tape | 1.8 V | 512 bit | - | Serial, 1-Wire, SDQ | 256 x 2 | 1 mA | 10 Year | |||
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497
In-stock
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Maxim Integrated | EEPROM 1024-BIT 1-W EEPROM 6.5X3.5 | SMD/SMT | SFN-2 | - 40 C | + 85 C | DS2431GA | Cut Tape | 2.8 V to 5.25 V | 1 kbit | - | Serial, 1-Wire, SDQ | 256 x 4 | 20 mA | 40 Year | |||
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415
In-stock
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Maxim Integrated | EEPROM DeepCover Secure Authenticator with 1-Wire SHA-256 and 2Kb... | SMD/SMT | TSOC-6 | - 40 C | + 85 C | DS28E22 | Tube | 2.97 V to 3.63 V | 2 kbit | - | Serial, 1-Wire, SDQ | 256 x 8 | 20 mA | 10 Year | |||
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232
In-stock
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Maxim Integrated | EEPROM 1-W 512B EEPROM W/SHA-256 SFN | SMD/SMT | TDFN-6 | - 40 C | + 85 C | DS28E15Q | Tube | 3.3 V | 512 bit | - | Serial, 1-Wire, SDQ | 256 x 2 | 1 mA | 10 Year | |||
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43
In-stock
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Maxim Integrated | EEPROM DeepCover Secure Authenticator with 1-Wire SHA-256 and 2Kb... | SMD/SMT | TDFN-6 | - 40 C | + 85 C | DS28E22Q | Tube | 3.3 V | 2 kbit | - | Serial, 1-Wire, SDQ | 256 x 8 | 1 mA | 10 Year | |||
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63
In-stock
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Maxim Integrated | EEPROM 1-Wire SHA-256 Authenticator with 4Kb User EEPROM | SMD/SMT | TDFN-6 | - 40 C | + 85 C | DS28E25Q | Tube | 3.3 V | 4 kbit | - | Serial, 1-Wire, SDQ | 256 x 16 | 1 mA | 10 Year | |||
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1,775
In-stock
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Toshiba | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | TC58NVG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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551
In-stock
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Toshiba | EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NVG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
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1,065
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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392
In-stock
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Toshiba | EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58BYG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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475
In-stock
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Toshiba | EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NYG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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413
In-stock
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Toshiba | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58BYG2S0 | Tray | 1.8 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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354
In-stock
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Toshiba | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | - 40 C | + 85 C | TC58NYG2S0 | Tray | 1.8 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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107
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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349
In-stock
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Toshiba | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NVG1S3 | Tray | 2 Gbit | - | Parallel | 256 M x 8 | 30 mA | |||||||
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75
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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156
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TFBGA-63 | - 40 C | + 85 C | TC58BVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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180
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TFBGA-63 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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140
In-stock
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Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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359
In-stock
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Toshiba | EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58NYG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
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96
In-stock
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Toshiba | EEPROM 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58BVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | ||||
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96
In-stock
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Toshiba | EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | VFBGA-67 | TC58BVG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
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2
In-stock
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Toshiba | EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | 0 C | + 70 C | TH58NVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA | ||||
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51
In-stock
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Toshiba | EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | TC58NVG0S3 | Tray | 1 Gbit | - | Parallel | 128 M x 8 | 30 mA | |||||||
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VIEW | Toshiba | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TC58NVG2S0 | Tray | 3.3 V | 4 Gbit | - | Parallel | 512 M x 8 | 30 mA | ||||
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VIEW | Toshiba | EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM | SMD/SMT | TSOP-48 | - 40 C | + 85 C | TH58NVG3S0 | Tray | 3.3 V | 8 Gbit | - | Parallel | 1 G x 8 | 30 mA |
