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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 61A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK (TO-252AA) | 0 | 525 | N-Channel | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | 120W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 525 | P-Channel | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 525 | P-Channel | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 525 | N-Channel | 55V | 20A (Tc) | 45 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 68W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 525 | N-Channel | 40V | 42A (Tc) | 9 mOhm @ 42A, 10V | 4V @ 250µA | 45nC @ 10V | 1510pF @ 25V | 10V | ±20V | 90W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 24A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 525 | N-Channel | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 42A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 525 | N-Channel | 40V | 42A (Tc) | 4.9 mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | 3810pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 36A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D-PAK | 0 | 525 | N-Channel | 55V | 36A (Ta) | - | - | - | - | - | - | - | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 525 | N-Channel | 30V | 35A (Tc) | 31 mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 120A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 525 | N-Channel | 20V | 120A (Tc) | 4 mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | 4.5V, 10V | ±20V | 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 54A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 525 | N-Channel | 20V | 54A (Tc) | 14 mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | 4.5V, 10V | ±20V | 3.8W (Ta), 71W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 36A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 525 | N-Channel | 20V | 36A (Tc) | 20 mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | 670pF @ 10V | 4.5V, 10V | ±20V | 47W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 525 | P-Channel | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D-PAK | 0 | 525 | P-Channel | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | |||
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VIEW | Texas instruments | MOSFET P-CH 15V 1.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 525 | P-Channel | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 2.7V, 10V | +2V, -15V | 791mW (Ta) |
