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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 100V 62A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 550 | N-Channel | - | 100V | 62A (Tc) | 13.5 mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | 10V | ±20V | 140W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 77A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | N-Channel | - | 20V | 77A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 4.5V, 10V | ±20V | 87W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 550 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 180W (Tc) | ||||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 550 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 550 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 30A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | N-Channel | - | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 62A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 550 | N-Channel | - | 30V | 62A (Tc) | 12 mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | 2.8V, 10V | ±12V | 87W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 59A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 550 | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | 57W (Tc) | ||||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 67A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 550 | N-Channel | - | 20V | 67A (Tc) | 7.9 mOhm @ 21A, 10V | 2.55V @ 250µA | 13nC @ 4.5V | 1220pF @ 10V | 4.5V, 10V | ±20V | 57W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 550 | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 3.8W (Ta), 110W (Tc) | |||||
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VIEW | Texas instruments | NEW LF VERSION OF CSD18502KCS | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 550 | N-Channel | - | 40V | 194A (Ta) | 2.6 mOhm @ 100A, 10V | 2.4V @ 250µA | 64nC @ 10V | 5940pF @ 20V | 4.5V, 10V | ±20V | 188W (Ta) | |||||
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Infineon Technologies | MOSFET 2N-CH 150V 8.7A TO-220FP | TO-220-5 Full Pack (Formed Leads) | - | Tube | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-5 Full-Pak | 0 | 550 | 2 N-Channel (Dual) | 18W | Standard | 150V | 8.7A | 95 mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V |