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Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
14 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 100V 62A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 550 N-Channel   - 100V 62A (Tc) 13.5 mOhm @ 37A, 10V 4V @ 100µA 87nC @ 10V 3180pF @ 50V 10V ±20V 140W (Tc)
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Infineon Technologies MOSFET P-CH 100V 6.8A TO262-3 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 550 P-Channel   - 100V 6.8A (Tc) 480 mOhm @ 4A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V 3.8W (Ta), 48W (Tc)
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Infineon Technologies MOSFET N-CH 30V 38A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 550 N-Channel   - 30V 38A (Tc) 26 mOhm @ 20A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 68W (Tc)
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Infineon Technologies MOSFET N-CH 20V 77A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 550 N-Channel   - 20V 77A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 19nC @ 4.5V 1996pF @ 10V 4.5V, 10V ±20V 87W (Tc)
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Infineon Technologies MOSFET N-CH 30V 116A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 550 N-Channel   - 30V 116A (Tc) 7 mOhm @ 60A, 10V 3V @ 250µA 60nC @ 4.5V 3290pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 180W (Tc)
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Infineon Technologies MOSFET N-CH 30V 38A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 550 N-Channel   - 30V 38A (Tc) 26 mOhm @ 20A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 68W (Tc)
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Infineon Technologies MOSFET N-CH 30V 38A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 550 N-Channel   - 30V 38A (Tc) 26 mOhm @ 20A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V 68W (Tc)
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Infineon Technologies MOSFET N-CH 55V 30A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 550 N-Channel   - 55V 30A (Tc) 35 mOhm @ 16A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V 3.8W (Ta), 68W (Tc)
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Infineon Technologies MOSFET N-CH 30V 62A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 550 N-Channel   - 30V 62A (Tc) 12 mOhm @ 15A, 10V 2V @ 250µA 24nC @ 4.5V 2417pF @ 15V 2.8V, 10V ±12V 87W (Tc)
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Infineon Technologies MOSFET N-CH 30V 59A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 550 N-Channel   - 30V 59A (Tc) 9.5 mOhm @ 21A, 10V 2.25V @ 25µA 15nC @ 4.5V 1210pF @ 15V 4.5V, 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET N-CH 20V 67A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 550 N-Channel   - 20V 67A (Tc) 7.9 mOhm @ 21A, 10V 2.55V @ 250µA 13nC @ 4.5V 1220pF @ 10V 4.5V, 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET P-CH 150V 13A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 550 P-Channel   - 150V 13A (Tc) 290 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V 3.8W (Ta), 110W (Tc)
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Texas instruments NEW LF VERSION OF CSD18502KCS TO-220-3 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 550 N-Channel   - 40V 194A (Ta) 2.6 mOhm @ 100A, 10V 2.4V @ 250µA 64nC @ 10V 5940pF @ 20V 4.5V, 10V ±20V 188W (Ta)
IRFI4019HG
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6,000
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Infineon Technologies MOSFET 2N-CH 150V 8.7A TO-220FP TO-220-5 Full Pack (Formed Leads) - Tube   Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220-5 Full-Pak 0 550 2 N-Channel (Dual) 18W Standard 150V 8.7A 95 mOhm @ 5.2A, 10V 4.9V @ 50µA 20nC @ 10V 810pF @ 25V      
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