- Manufacture :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.5 A (1)
- - 36 A (1)
- 10 A (2)
- 11 A (1)
- 11.4 A (1)
- 12 A (1)
- 12.6 A (1)
- 13 A (1)
- 13.5 A (1)
- 140 A (1)
- 15 A (3)
- 15.8 A (1)
- 16 A (2)
- 16.5 A (1)
- 160 A (1)
- 17 A (1)
- 170 A (1)
- 18.5 A (1)
- 19 A (1)
- 20 A (4)
- 22 A (3)
- 23 A (1)
- 23.5 A (1)
- 235 A (1)
- 24 A (3)
- 27 A (1)
- 28 A (2)
- 28.4 A (1)
- 30 A (3)
- 30.8 A (2)
- 32 A (1)
- 33 A (2)
- 34.9 A (1)
- 35 A (1)
- 38 A (1)
- 38.4 A (1)
- 38.8 A (2)
- 40 A (2)
- 43.5 A (1)
- 47 A (3)
- 48 A (1)
- 5 A (1)
- 50 A (2)
- 55 A (1)
- 59 A (2)
- 6 A (1)
- 61.8 A (1)
- 62 A (1)
- 65 A (1)
- 69 A (1)
- 7 A (2)
- 70 A (4)
- 76 A (1)
- 8 A (2)
- 8.5 A (1)
- 8.6 A (1)
- 9 A (2)
- 90 A (2)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 1.1 Ohms (1)
- 1.25 Ohms (1)
- 1.3 Ohms (1)
- 1.4 Ohms (2)
- 1.45 Ohms (1)
- 1.6 Ohms (1)
- 1.9 Ohms (2)
- 10 mOhms (1)
- 105 mOhms (1)
- 110 mOhms (1)
- 140 mOhms (2)
- 150 mOhms (2)
- 155 mOhms (1)
- 16 mOhms (1)
- 160 mOhms (2)
- 170 mOhms (1)
- 175 mOhms (1)
- 18 mOhms (1)
- 190 mOhms (4)
- 2.1 mOhms (1)
- 2.3 Ohms (1)
- 2.5 Ohms (1)
- 200 mOhms (2)
- 230 mOhms (1)
- 240 mOhms (1)
- 25 mOhms (1)
- 260 mOhms (2)
- 265 mOhms (1)
- 28 mOhms (2)
- 3.2 mOhms (1)
- 300 mOhms (1)
- 32 mOhms (1)
- 320 mOhms (1)
- 33 mOhms (1)
- 35 mOhms (2)
- 380 mOhms (3)
- 40 mOhms (1)
- 400 mOhms (1)
- 41 mOhms (1)
- 42 mOhms (1)
- 480 mOhms (2)
- 49 mOhms (1)
- 490 mOhms (1)
- 5.6 mOhms (1)
- 5.8 mOhms (1)
- 52 mOhms (1)
- 55 mOhms (1)
- 56 mOhms (1)
- 620 mOhms (1)
- 65 mOhms (3)
- 69 mOhms (1)
- 7 mOhms (1)
- 70 mOhms (4)
- 700 mOhms (1)
- 73 mOhms (2)
- 750 mOhms (1)
- 79 mOhms (1)
- 80 mOhms (1)
- 82 mOhms (1)
- 85 mOhms (1)
- 88 mOhms (1)
- 90 mOhms (2)
- 94 mOhms (1)
- 960 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
88 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,381
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | UniFET | |||||
|
|
1,071
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
|
458
In-stock
|
Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 105 mOhms | Enhancement | ||||||
|
|
885
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||
|
|
582
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 43.5 A | 69 mOhms | Enhancement | QFET | |||||
|
|
825
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.5 A | 240 mOhms | Enhancement | QFET | |||||
|
|
447
In-stock
|
Fairchild Semiconductor | MOSFET 650V SUPER FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | SuperFET | |||||
|
|
383
In-stock
|
Fairchild Semiconductor | MOSFET 650V SUPER FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | SuperFET | |||||
|
|
436
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Ch SupreMOS FRFET MOSFET | 30 V | Through Hole | TO-3PN-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 34.9 A | 80 mOhms | 3.7 V | 86 nC | SupreMOS FRFET | ||||||
|
|
321
In-stock
|
Fairchild Semiconductor | MOSFET SUPREMOS 76A IN TO3P | 30 V | Through Hole | TO-3PN-3 | + 150 C | Tube | Si | N-Channel | 600 V | 76 A | 28 mOhms | SupreMOS | ||||||||
|
|
798
In-stock
|
Fairchild Semiconductor | MOSFET 47A, 600V SuperFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 73 mOhms | Enhancement | SuperFET FRFET | |||||
|
|
1,206
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Ch C-FET (FRFET) | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | Enhancement | QFET | |||||
|
|
841
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 2.3 Ohms | Enhancement | QFET | |||||
|
|
718
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 265 mOhms | Enhancement | ||||||
|
|
989
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 23 A | 190 mOhms | Enhancement | UniFET | |||||
|
|
443
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CH QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18.5 A | 380 mOhms | Enhancement | QFET | |||||
|
|
721
In-stock
|
Fairchild Semiconductor | MOSFET UniFET1 300V N-chan MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 70 mOhms | 5 V | 60 nC | UniFET | ||||
|
|
573
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 59 A | 49 mOhms | Enhancement | ||||||
|
|
647
In-stock
|
Fairchild Semiconductor | MOSFET UniFET 500V | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 190 mOhms | Enhancement | UniFET | |||||
|
|
4,405
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 40 A | 70 mOhms | Enhancement | QFET | |||||
|
|
597
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 69 A | 41 mOhms | Enhancement | ||||||
|
|
8,488
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 10 mOhms | Enhancement | QFET | |||||
|
|
439
In-stock
|
Fairchild Semiconductor | MOSFET 40V 100A 2.1mOhm N-Chan Power Trench | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 30 A | 2.1 mOhms | Enhancement | PowerTrench | |||||
|
|
335
In-stock
|
Fairchild Semiconductor | MOSFET UniFET 500V | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 155 mOhms | Enhancement | UniFET | |||||
|
|
2,670
In-stock
|
Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 59 A | 56 mOhms | Enhancement | ||||||
|
|
531
In-stock
|
Fairchild Semiconductor | MOSFET PT3 75V 3.2mohm | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
|
|
292
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 170 A | 5.6 mOhms | Enhancement | QFET | |||||
|
|
4,000
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 90 A | 18 mOhms | Enhancement | QFET | |||||
|
|
266
In-stock
|
Fairchild Semiconductor | MOSFET 500V 28A N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28 A | 175 mOhms | Enhancement | UniFET | |||||
|
|
347
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement | QFET |
