- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
-
- - 100 V (3)
- - 150 V (1)
- - 200 V (1)
- - 40 V (1)
- - 55 V (4)
- - 60 V (3)
- 100 V (12)
- 1000 V (3)
- 150 V (1)
- 200 V (5)
- 25 V (3)
- 250 V (4)
- 30 V (65)
- 40 V (6)
- 400 V (2)
- 42 V (1)
- 450 V (1)
- 50 V (1)
- 500 V (18)
- 520 V (1)
- 55 V (13)
- 56 V (1)
- 60 V (12)
- 600 V (36)
- 650 V (10)
- 675 V (1)
- 700 V (7)
- 75 V (1)
- 80 V (1)
- 800 V (15)
- 900 V (3)
- Id - Continuous Drain Current :
-
- - 10 A (1)
- - 11 A (1)
- - 12 A (2)
- - 13 A (2)
- - 18 A (1)
- - 20 A (1)
- - 3.7 A (1)
- - 31 A (1)
- - 6.5 A (1)
- - 6.6 A (1)
- - 9.4 A (1)
- 1 A (4)
- 1.3 A (1)
- 1.5 A (2)
- 1.6 A (3)
- 1.7 A (2)
- 1.8 A (3)
- 1.9 A (2)
- 10 A (2)
- 100 A (3)
- 100 mA (1)
- 11 A (4)
- 11.5 A (1)
- 110 A (1)
- 119 A (1)
- 12 A (2)
- 12.5 A (1)
- 13 A (1)
- 130 A (1)
- 14 A (1)
- 15 A (1)
- 16 A (3)
- 160 A (1)
- 161 A (1)
- 17 A (3)
- 17.2 A (1)
- 180 A (1)
- 2 A (2)
- 2.1 A (1)
- 2.3 A (1)
- 2.4 A (3)
- 2.5 A (2)
- 2.6 A (4)
- 2.8 A (1)
- 20 A (2)
- 200 mA (1)
- 22 A (1)
- 24 A (1)
- 3 A (3)
- 3.1 A (2)
- 3.2 A (4)
- 3.4 A (1)
- 30 A (2)
- 31 A (1)
- 33 A (2)
- 35 A (1)
- 36 A (1)
- 37 A (1)
- 4 A (5)
- 4.3 A (2)
- 4.4 A (3)
- 4.5 A (5)
- 4.8 A (2)
- 40 A (1)
- 43 A (1)
- 46 A (1)
- 49 A (1)
- 5 A (2)
- 5.2 A (1)
- 5.4 A (1)
- 5.5 A (1)
- 5.7 A (1)
- 5.8 A (1)
- 50 A (2)
- 51 A (1)
- 56 A (2)
- 57 A (1)
- 6 A (2)
- 6.2 A (1)
- 6.5 A (1)
- 6.6 A (1)
- 60 A (2)
- 61 A (1)
- 63 A (3)
- 65 A (1)
- 69 A (1)
- 7 A (2)
- 7.1 A (1)
- 7.3 A (2)
- 7.4 A (1)
- 7.8 A (2)
- 71 A (1)
- 750 mA (1)
- 8 A (2)
- 8.5 A (1)
- 80 A (1)
- 800 mA (3)
- 81 A (1)
- 86 A (1)
- 89 A (1)
- 9 A (2)
- 9.1 A (1)
- 9.3 A (1)
- 9.7 A (1)
- 90 A (2)
- 900 mA (1)
- 91 A (2)
- 93 A (1)
- 99 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (3)
- 1.02 Ohms (1)
- 1.05 Ohms (2)
- 1.1 Ohms (1)
- 1.15 Ohms (1)
- 1.26 Ohms (4)
- 1.4 Ohms (6)
- 1.5 Ohms (2)
- 1.6 Ohms (1)
- 1.8 Ohms (2)
- 1.98 mOhms (1)
- 100 mOhms (2)
- 104 mOhms (1)
- 107 mOhms (1)
- 11.4 mOhms (1)
- 11.5 Ohms (1)
- 11.8 mOhms (2)
- 110 mOhms (2)
- 115 mOhms (3)
- 12 mOhms (1)
- 12 Ohms (1)
- 12.2 Ohms (1)
- 12.5 mOhms (1)
- 12.6 mOhms (1)
- 12.9 mOhms (1)
- 13.5 mOhms (3)
- 13.9 mOhms (1)
- 135 mOhms (1)
- 15.5 mOhms (1)
- 155 mOhms (1)
- 16 mOhms (3)
- 16 Ohms (1)
- 17 mOhms (1)
- 17 Ohms (1)
- 170 mOhms (1)
- 175 mOhms (1)
- 180 mOhms (2)
- 185 mOhms (1)
- 2 Ohms (3)
- 2.1 Ohms (1)
- 2.25 Ohms (1)
- 2.4 mOhms (1)
- 2.4 Ohms (1)
- 2.7 Ohms (4)
- 20 Ohms (1)
- 20.5 mOhms (1)
- 205 mOhms (1)
- 210 mOhms (1)
- 22.5 mOhms (2)
- 235 mOhms (1)
- 24 mOhms (1)
- 24.5 mOhms (1)
- 265 mOhms (2)
- 27 mOhms (1)
- 275 mOhms (1)
- 280 mOhms (1)
- 295 mOhms (1)
- 3 Ohms (3)
- 3.1 mOhms (1)
- 3.3 Ohms (1)
- 3.4 Ohms (1)
- 3.5 Ohms (1)
- 3.6 Ohms (1)
- 3.9 mOhms (2)
- 30 Ohms (1)
- 300 mOhms (1)
- 31 mOhms (1)
- 320 mOhms (1)
- 327 mOhms (1)
- 34 mOhms (1)
- 360 mOhms (1)
- 39 mOhms (1)
- 4 mOhms (3)
- 4.25 mOhms (1)
- 4.3 Ohms (1)
- 4.4 mOhms (1)
- 4.5 Ohms (3)
- 4.7 Ohms (1)
- 4.8 Ohms (1)
- 40 mOhms (1)
- 410 mOhms (1)
- 420 mOhms (2)
- 46 mOhms (1)
- 47 mOhms (1)
- 480 mOhms (1)
- 490 mOhms (1)
- 5 mOhms (1)
- 5.3 Ohms (2)
- 5.5 mOhms (1)
- 5.8 mOhms (2)
- 50 mOhms (1)
- 500 mOhms (2)
- 51 mOhms (1)
- 520 mOhms (1)
- 550 mOhms (1)
- 6 Ohms (2)
- 6.5 Ohms (1)
- 6.6 mOhms (1)
- 600 mOhms (3)
- 63 mOhms (1)
- 65 mOhms (2)
- 680 mOhms (1)
- 7 mOhms (1)
- 7.1 Ohms (1)
- 7.2 Ohms (2)
- 7.34 mOhms (1)
- 7.8 mOhms (1)
- 740 mOhms (1)
- 75 mOhms (1)
- 770 mOhms (1)
- 78 mOhms (1)
- 8 Ohms (1)
- 8.2 mOhms (1)
- 8.3 mOhms (1)
- 8.5 mOhms (1)
- 80 Ohms (1)
- 800 mOhms (1)
- 850 mOhms (1)
- 855 mOhms (2)
- 86 mOhms (1)
- 860 mOhms (3)
- 890 mOhms (1)
- 9 mOhms (1)
- 900 mOhms (1)
- 950 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (5)
- 10.5 nC (5)
- 103 nC (1)
- 11 nC (3)
- 12 nC (3)
- 12.7 nC (1)
- 13 nC (5)
- 13.3 nC (2)
- 130 nC (1)
- 134 nC (1)
- 14 nC (1)
- 15 nC (2)
- 15.3 nC (3)
- 16 nC (2)
- 16.4 nC (1)
- 16.7 nC (1)
- 17 nC (1)
- 18 nC (4)
- 18.5 nC (1)
- 19 nC (1)
- 19.3 nC (1)
- 20 nC (1)
- 21.3 nC (1)
- 22 nC (2)
- 22.5 nC (1)
- 22.7 nC (1)
- 23 nC (1)
- 25 nC (3)
- 26 nC (2)
- 30 nC (1)
- 31 nC (2)
- 32 nC (1)
- 33 nC (1)
- 33.3 nC (1)
- 34 nC (3)
- 37 nC (1)
- 38.7 nC (1)
- 39 nC (1)
- 4 nC (1)
- 4.3 nC (2)
- 4.7 nC (1)
- 4.8 nC (1)
- 4.9 nC (1)
- 42 nC (2)
- 43.3 nC (1)
- 44 nC (3)
- 56 nC (3)
- 59 nC (1)
- 6 nC (2)
- 6.7 nC (1)
- 6.8 nC (2)
- 61 nC (1)
- 66 nC (1)
- 7 nC (1)
- 7.2 nC (1)
- 7.4 nC (1)
- 7.7 nC (1)
- 70 nC (1)
- 8 nC (1)
- 8.2 nC (2)
- 8.5 nC (1)
- 8.8 nC (1)
- 87 nC (1)
- 9.3 nC (1)
- 9.4 nC (3)
- 9.6 nC (1)
- 9.8 nC (1)
- 9.9 nC (1)
- Channel Mode :
- Applied Filters :
227 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
494
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
479
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | |||
|
|
455
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
|
325
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
1,515
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | ||||
|
|
7,116
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
|
|
4,345
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
|
|
4,863
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel Adv QFET C-series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.5 A | 2.1 Ohms | Enhancement | ||||||
|
|
4,605
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V 2.6A/2.7OHM | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | Enhancement | QFET | |||||
|
|
5,391
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 17.2 A | 63 mOhms | Enhancement | ||||||
|
|
4,468
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | ||||||
|
|
5,232
In-stock
|
Fairchild Semiconductor | MOSFET -60V Single | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 135 mOhms | Enhancement | ||||||
|
|
4,984
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3.4 A | 1.6 Ohms | Enhancement | ||||||
|
|
14,744
In-stock
|
Fairchild Semiconductor | MOSFET 1000V/1.6A/N-CH | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
|
|
5,610
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | ||||||
|
|
5,086
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 1.05 Ohms | UniFET | |||||||
|
|
1,479
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener embedded, IPAK PKG | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
|
|
4,572
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||||
|
|
4,864
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | QFET | |||||||||
|
|
5,037
In-stock
|
Fairchild Semiconductor | MOSFET 500V,4.0A NCH MOSFET | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.4 Ohms | ||||||||||
|
|
3,007
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 60V 7.7 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
4,932
In-stock
|
Vishay Semiconductors | MOSFET P-Chan 400V 1.8 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
5,776
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 600V 2.0 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
5,944
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 60V 14 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
5,085
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
|
|
3,892
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 400V 3.1 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
4,228
In-stock
|
Vishay Semiconductors | MOSFET P-Chan 60V 5.1 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
2,060
In-stock
|
Infineon Technologies | MOSFET 100V 64A 14.5mOhm HEXFET 140W 50nC | 20 V | Through Hole | TO-251-3 | Tube | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 14 nC | StrongIRFET | ||||||||
|
|
2,660
In-stock
|
Vishay Semiconductors | MOSFET P-Chan 200V 1.9 Amp | TO-251-3 | Tube | Si | ||||||||||||||||
|
|
2,557
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 100V 4.3 Amp | TO-251-3 | Tube | Si |
