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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Package | Installation style | Factory packaging quantity | unit weight | RoHS | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | |
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GET PRICE |
7,800
In-stock
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Toshiba Semiconductor | MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB... | 20 V | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | 10 mm | 4.5 mm | 15 mm | Single | Si | N-Channel | Enhancement | 15 ns | Reel | Through Hole | 200 V | 5 A | 800 mOhms | 25 W | 67 ns | 41 ns | |||||
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12,350
In-stock
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Toshiba | MOSFET N-Ch 500V 8A Rdson 0.85 Ohm | 1 Channel | 10 mm | 4.5 mm | 15 mm | Single | Si | N-Channel | Through Hole | 50 | 2 g | N | 500 V | 8 A | 850 mOhms |
