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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 170A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 200°C (TJ) | Obsolete | TO-220AB | 0 | 50 | N-Channel | 40V | 170A (Tc) | 4 mOhm @ 100A, 10V | 4V @ 250µA | 260nC @ 10V | 6950pF @ 25V | 10V | ±20V | 230W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 200°C (TJ) | Active | HiP247™ | 0 | 1 | N-Channel | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | 318W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 1200V 45A HIP247 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 200°C (TJ) | Active | HiP247™ | 0 | 1 | N-Channel | 1200V | 40A (Tc) | 100 mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | 20V | +25V, -10V | 270W (Tc) | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 1200V 20A HIP247 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 200°C (TJ) | Active | HiP247™ | 0 | 1 | N-Channel | 1200V | 20A (Tc) | 290 mOhm @ 10A, 20V | 3.5V @ 1mA | 45nC @ 20V | 650pF @ 400V | 20V | +25V, -10V | 175W (Tc) | ||||
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501
In-stock
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STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 200°C (TJ) | Active | HiP247™ | 0 | 1 | N-Channel | 1200V | 12A (Tc) | 690 mOhm @ 6A, 20V | 3.5V @ 250µA | 22nC @ 20V | 290pF @ 400V | 20V | +25V, -10V | 150W (Tc) |