- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 6.5 A, - 6.5 A (1)
- 10 A (2)
- 10.8 A (1)
- 103 A, 103 A (1)
- 115 mA (1)
- 13 A, 13 A (2)
- 14 A (1)
- 15 A, 15 A (1)
- 16 A, 16 A (2)
- 17 A, 17 A (1)
- 170 mA, 170 mA (1)
- 180 mA, 180 mA (1)
- 2.6 A, 2.6 A (2)
- 20 A, 20 A (6)
- 22 A, 22 A (2)
- 220 mA, 220 mA (1)
- 25 A, 25 A (1)
- 250 mA, 250 mA (1)
- 260 mA, 260 mA (2)
- 3 A, 3 A (1)
- 3.5 A, 3.5 A (1)
- 30 A, 30 A (1)
- 300 mA, 300 mA (5)
- 33 A, 33 A (1)
- 330 mA, 330 mA (1)
- 34 A, 34 A (1)
- 350 mA, 350 mA (2)
- 37.8 A (1)
- 4.5 A, 4.5 A (1)
- 40 A, 40 A (8)
- 44 A, 44 A (1)
- 48 A, 48 A (1)
- 5 A, 5 A (3)
- 5.0 A (1)
- 5.1 A, 5.1 A (1)
- 5.5 A, 5.5 A (1)
- 7.2 A, 7.2 A (1)
- 7.3 A, 7.3 A (1)
- 7.7 A, 7.7 A (3)
- 9.3 A, 9.3 A (2)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms, 1 Ohms (1)
- 1.05 Ohms, 1.05 Ohms (1)
- 1.2 Ohms, 1.2 Ohms (2)
- 1.6 Ohms, 1.6 Ohms (3)
- 116 mOhms, 116 mOhms (1)
- 12.5 mOhms, 12.5 mOhms (2)
- 12.5 mOhms, 12.5 mOms (2)
- 120 mOhms, 120 mOhms (2)
- 16 mOhms (4)
- 18.3 mOhms, 18.3 mOhms (2)
- 18.7 mOhms, 18.6 mOhms (1)
- 2.2 MOhms, 2.2 MOhms (1)
- 2.4 Ohms, 2.4 Ohms (1)
- 2.5 mOhms, 900 uOhms (1)
- 2.8 Ohms, 2.8 Ohms (2)
- 20 mOhms, 20 mOhms (1)
- 24 mOhms, 24 mOhms (2)
- 27 mOhms, 27 mOhms (2)
- 3.5 mOhms, 900 uOhms (2)
- 3.8 mOhms, 2.1 mOhms (1)
- 3.8 mOhms, 2.8 mOhms (1)
- 3.9 mOhms, 1.2 mOhms (2)
- 30 mOhms, 30 mOhms (1)
- 31 mOhms, 31 mOhms (3)
- 35 mOhms, 35 mOhms (1)
- 4.2 mOhms, 4.2 mOhms (1)
- 4.3 mOhms, 4.3 mOhms (1)
- 4.4 Ohms (1)
- 4.6 mOhms, 2.1 mOhms (1)
- 4.7 mOhms, 1.8 mOhms (1)
- 45 mOhms, 45 mOhms (2)
- 5.3 mOhms, 5.3 mOhms (1)
- 5.4 mOhms, 5.4 mOhms (1)
- 5.7 Ohms, 5.7 Ohms (2)
- 53 mOhms, 53 mOhms (2)
- 6 mOhms, 6 mOhms (2)
- 6.6 mOhms, 6.6 mOhms (1)
- 62 mOhms, 62 mOhms (2)
- 65 mOhms, 65 mOhms (1)
- 7.9 mOhms, 7.9 mOhms (2)
- 8 Ohms (1)
- 8.1 Ohms, 8.1 Ohms (1)
- 8.4 mOhms, 8.4 mOhms (1)
- 8.7 mOhms, 8.7 mOhms (1)
- 95 mOhms, 95 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 1 nC, 1 nC (2)
- 1.23 nC, 1.23 nC (1)
- 10 nC, 10 nC (3)
- 10 nC, 12.8 nC (1)
- 10 nC, 18.4 nC (1)
- 10 nC, 23 nC (1)
- 10.6 nC, 16 nC (1)
- 11 nC, 11 nC (2)
- 12 nC, 37 nC (1)
- 12.9 nC, 12.9 nC (1)
- 13.2 nC, 13.2 nC (2)
- 14 nC, 14 nC (1)
- 17 nC, 17 nC (3)
- 20 nC, 20 nC (4)
- 22 nC, 21 nC (1)
- 22.4 nC, 22.4 nC (1)
- 23 nC, 23 nC (1)
- 25.1 nC (4)
- 25.1 nC, 25.1 nC (1)
- 26 nC, 26 nC (2)
- 270 pC, 270 pC (1)
- 28 nC, 28 nC (2)
- 29 nC, 29 nC (1)
- 36 nC, 36 nC (1)
- 390 pC, 390 pC (1)
- 40 nC, 40 nC (2)
- 400 pC, 400 pC (1)
- 41 nC, 41 nC (2)
- 49 nC, 49 nC (1)
- 500 pC, 500 pC (1)
- 6 nC, 6 nC (1)
- 6.6 nC, 30.6 nC (2)
- 600 pC, 600 pC (3)
- 7 nC, 7 nC (3)
- 8.9 nC, 33 nC (2)
- 81 nC, 81 nC (1)
- 870 pC, 870 pC (3)
- 9 nC, 9 nC (1)
- 9.7 nC, 23 nC (1)
- 9.9 nC, 9.9 nC (1)
- 900 pC, 900 pC (1)
- 92 nC, 92 nC (1)
- Channel Mode :
- Applied Filters :
68 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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21,269
In-stock
|
Diodes Incorporated | MOSFET 60 / -50V 200mW | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 115 mA | 4.4 Ohms | Enhancement | ||||||
|
|
2,660
In-stock
|
Fairchild Semiconductor | MOSFET 60V/20V Dual N-Ch PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 15 A, 15 A | 8.7 mOhms, 8.7 mOhms | 1 V, 1 V | 49 nC, 49 nC | Enhancement | Power Clip | |||
|
|
2,532
In-stock
|
Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 48 A, 48 A | 18.7 mOhms, 18.6 mOhms | 2 V, 2V | 22 nC, 21 nC | Enhancement | PowerTrench Power Clip | |||
|
|
1,480
In-stock
|
Fairchild Semiconductor | MOSFET 60V Dual N-Channel PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 22 A, 22 A | 5.4 mOhms, 5.4 mOhms | 1 V, 1 V | 92 nC, 92 nC | Enhancement | ||||
|
|
1,415
In-stock
|
Fairchild Semiconductor | MOSFET 40V Dual N-Channel PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 33 A, 33 A | 2.2 MOhms, 2.2 MOhms | 1 V, 1 V | 81 nC, 81 nC | Enhancement | ||||
|
|
4,522
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 12.5 mOhms, 12.5 mOms | 1 V, 1 V | 13.2 nC, 13.2 nC | Enhancement | OptiMOS | |||
|
|
3,814
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 6 mOhms, 6 mOhms | 1 V, 1 V | 41 nC, 41 nC | Enhancement | OptiMOS | |||
|
|
6,733
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 62 mOhms, 62 mOhms | 2 V, 2 V | 11 nC, 11 nC | Enhancement | OptiMOS | |||
|
|
4,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 9.3 A, 9.3 A | 12.5 mOhms, 12.5 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
|
|
3,987
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5.1 A, 5.1 A | 65 mOhms, 65 mOhms | 1 V, 1 V | 29 nC, 29 nC | Enhancement | ||||
|
|
51,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | ||||
|
|
2,793
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 2.5 mOhms, 900 uOhms | 1.2 V, 1.2 V | 12 nC, 37 nC | Enhancement | ||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 20 A, 20 A | 12.5 mOhms, 12.5 mOms | 1 V, 1 V | 13.2 nC, 13.2 nC | Enhancement | OptiMOS | |||
|
|
4,348
In-stock
|
Infineon Technologies | MOSFET MOSFET | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 16 A, 16 A | 53 mOhms, 53 mOhms | 2 V, 2 V | 7 nC, 7 nC | Enhancement | ||||
|
|
25,040
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | OptiMOS | |||
|
|
1,050
In-stock
|
Fairchild Semiconductor | MOSFET 40V 103 A Dual NChnl Power Trench MOSFET | 20 V, 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 103 A, 103 A | 4.3 mOhms, 4.3 mOhms | 1 V, 1 V | 40 nC, 40 nC | Enhancement | Power Clip | |||
|
|
2,950
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 18.3 mOhms, 18.3 mOhms | 1 V, 1 V | 10 nC, 10 nC | Enhancement | OptiMOS | |||
|
|
1,904
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | OptiMOS | |||
|
|
2,414
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | ||||
|
|
3,194
In-stock
|
Infineon Technologies | MOSFET MOSFET | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 16 A, 16 A | 53 mOhms, 53 mOhms | 2 V, 2 V | 7 nC, 7 nC | Enhancement | ||||
|
|
4,694
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC | 20 V, 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37.8 A | 16 mOhms | 1.3 V | 25.1 nC | Enhancement | ||||
|
|
2,995
In-stock
|
Diodes Incorporated | MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V, - 40 V | - 6.5 A, - 6.5 A | 45 mOhms, 45 mOhms | - 1 V, - 1 V | 10.6 nC, 16 nC | Enhancement | ||||
|
|
4,505
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.2 A, 7.2 A | 24 mOhms, 24 mOhms | 1 V, 1 V | 12.9 nC, 12.9 nC | Enhancement | ||||
|
|
1,652
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement | OptiMOS | |||
|
|
7,939
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
|
|
2,400
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | ||||
|
|
20,430
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.6 Ohms, 1.6 Ohms | 1.5 V, 1.5 V | 600 pC, 600 pC | Enhancement | ||||
|
|
5,346
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.6 Ohms, 1.6 Ohms | 1.5 V, 1.5 V | 600 pC, 600 pC | Enhancement | ||||
|
|
2,088
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 180 mA, 180 mA | 8 Ohms | 1 V, 1 V | 870 pC, 870 pC | Enhancement | ||||
|
|
10,256
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA | 20 V, 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 260 mA, 260 mA | 2.8 Ohms, 2.8 Ohms | 800 mV, 800 mV | 870 pC, 870 pC | Enhancement |
