- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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43,970
In-stock
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Fairchild Semiconductor | MOSFET PT5 150/25V Pch Pwr Trench MOSFET | +/- 25 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 22 A | 42 mOhms | - 4 V | 63 nC | Enhancement | PowerTrench | |||
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4,060
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | |||
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6,560
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | |||
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3,238
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | ||||
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3,979
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | OptiMOS | |||
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4,496
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | ||||
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2,180
In-stock
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Diodes Incorporated | MOSFET P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 15 mOhms | - 2 V | 47.5 nC | Enhancement | ||||
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2,965
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | ||||
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5,044
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||
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17,176
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 | +/- 25 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 4 nC | Enhancement | ||||
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2,050
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 7 mOhms | - 2.5 V | 47.5 nC | Enhancement | ||||
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369
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | OptiMOS | |||
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1,401
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 14 mOhms | - 2.5 V | 91 nC | Enhancement | ||||
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3,555
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 35 A | 11 mOhms | - 2 V | 47.5 nC | Enhancement | |||||
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GET PRICE |
24,170
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | ||
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4,552
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 25 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 4.5 A | 50 mOhms | - 2 V | 10.5 nC | Enhancement | |||||
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1,749
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 50 C | + 155 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.9 A | 17 mOhms | - 3 V | 41 nC | Enhancement | ||||
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2,462
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | |||
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2,339
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | |||
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1,355
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 8.5 mOhms | - 3 V | 41 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 2.5 V | 16.5 nC | Enhancement | PowerDI | |||
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279
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/25V Pch PowerTrench Mosfet | +/- 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2 A | 541 mOhms | - 4 V | 9.1 nC | Enhancement | PowerTrench | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 58 nC | Enhancement | |||||
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GET PRICE |
49,940
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | |||
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4,235
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement |
