- Package/shell :
- Current at 25°C-Continuous Drain (Id) :
- On resistance at different Id and Vgs (maximum) :
- Gate charge (Qg) (maximum) at different Vgs :
- Input capacitance (Ciss) (maximum) at different Vds :
- Power dissipation (maximum) :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Technology | Operating Temperature | FET Type | Package/shell | Drive Voltage (Max Rds On, Min Rds On) | Product Family | Drain-source voltage (Vdss) | Current at 25°C-Continuous Drain (Id) | On resistance at different Id and Vgs (maximum) | Vgs(th) (maximum) for different Id | Gate charge (Qg) (maximum) at different Vgs | Vgs (maximum) | Input capacitance (Ciss) (maximum) at different Vds | Power dissipation (maximum) | Type of installation | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
12,500
In-stock
|
Vishay Semiconductors | MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N channel | TO-247-3 | 10V | Transistor-FET, MOSFET-single | 600V | 47A (Tc) | 64 milliohms @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±30V | 9620pF @ 100V | 357W (Tc) | Through Hole | ||
|
|
GET PRICE |
12,000
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 600V 6.2 Amp | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N channel | TO-220-3 | 10V | Transistor-FET, MOSFET-single | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | 125W (Tc) | Through Hole |
