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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Technology | Operating Temperature | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier device packaging | Product Family | Drain-source voltage (Vdss) | Current at 25°C-Continuous Drain (Id) | On resistance at different Id and Vgs (maximum) | Vgs(th) (maximum) for different Id | Gate charge (Qg) (maximum) at different Vgs | Vgs (maximum) | Input capacitance (Ciss) (maximum) at different Vds | Power dissipation (maximum) | Type of installation | |
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12,000
In-stock
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Vishay Semiconductors | MOSFET 800V Single N-Channel HEXFET | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N channel | 10V | TO-220AB | Transistor-FET, MOSFET-single | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | 54W (Tc) | Through Hole |
