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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Technology Operating Temperature FET Type Drive Voltage (Max Rds On, Min Rds On) Product Family Drain-source voltage (Vdss) Current at 25°C-Continuous Drain (Id) On resistance at different Id and Vgs (maximum) Vgs(th) (maximum) for different Id Gate charge (Qg) (maximum) at different Vgs Vgs (maximum) Power dissipation (maximum) Type of installation
SI1012R-T1-GE3
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35,000
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Vishay Semiconductors MOSFET 20V 0.6A 175mW 700mohm @ 4.5V MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N channel 1.8V, 4.5V Transistor-FET, MOSFET-single 20V 500mA (Ta) 700 milliohms @ 600mA, 4.5V 900mV @ 250µA .75nC @ 4.5V ±6V 150mW (Ta) Surface mount type
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