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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Technology | Operating Temperature | FET Type | Package/shell | Drive Voltage (Max Rds On, Min Rds On) | Product Family | Drain-source voltage (Vdss) | Current at 25°C-Continuous Drain (Id) | On resistance at different Id and Vgs (maximum) | Vgs(th) (maximum) for different Id | Gate charge (Qg) (maximum) at different Vgs | Vgs (maximum) | Input capacitance (Ciss) (maximum) at different Vds | Power dissipation (maximum) | Type of installation | |
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12,000
In-stock
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Vishay Semiconductors | MOSFET N-Chan 600V 6.2 Amp | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N channel | TO-220-3 | 10V | Transistor-FET, MOSFET-single | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | 125W (Tc) | Through Hole |
