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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Configuration | Transistor Polarity | Gain Bandwidth Product fT | Package | Product Category | Installation style | Factory packaging quantity | Pd-power dissipation | Collector - base voltage VCBO | Emitter - base voltage VEBO | Collector continuous current | DC Collector / Base Gain hfe Min | DC current gain hFE maximum | |
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7,850
In-stock
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Toshiba Semiconductor | Bipolar Transistors - Bipolar Junction Transistors (BJT) Pb-FF TO12... | Single | NPN | 200 MHz | Tube | Bipolar Transistor - Bipolar Junction Transistor (BJT) | Through Hole | 600 | 5 W | 150 V | 5 V | 50 mA | 80 | 240 |
