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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Number of Channels Length Width Height Configuration Technology Transistor Polarity Installation style Factory packaging quantity unit weight RoHS Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance
2SK3561
5+
$1.500
RFQ
12,350
In-stock
Toshiba MOSFET N-Ch 500V 8A Rdson 0.85 Ohm 1 Channel 10 mm 4.5 mm 15 mm Single Si N-Channel Through Hole 50 2 g N 500 V 8 A 850 mOhms
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