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Transistor Polarity :
Typical Turn-Off Delay Time :
Typical Turn-On Delay Time :
Installation style :
Id-continuous drain current :
Pd-power dissipation :
Maximum working temperature :
Factory packing quantity :
Vds-Drain-source breakdown voltage :
Rds On-Drain-source on resistance :
Vgs th- gate-source threshold voltage :
Qg-gate charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Number of Channels Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Transistor Type Package Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Installation style trademark Id-continuous drain current Pd-power dissipation Trade name Minimum working temperature Package / Box Maximum working temperature Factory packing quantity Vds-Drain-source breakdown voltage Rds On-Drain-source on resistance Vgs-gate-source voltage Vgs th- gate-source threshold voltage Qg-gate charge Forward transconductance-minimum
IPW60R037CSFD
Per Unit
$10.647
RFQ
12,500
In-stock
Infineon Technologies HIGH POWER_NEW   1 Channel Single Si N-Channel Enhancement 30 ns 6 ns 1 N-Channel Tube 196 ns 53 ns MOSFETs MOSFET Through Hole Infineon Technologies 54 A 245 W   -55 C TO-247-3 + 150 C 240 650 V 37 mOhms -20 V, + 20 V 3.5 V 136 nC  
SUM90P10-19L-E3
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RFQ
25,000
In-stock
Siliconix / Vishay MOSFET 100V 90A 375W 19mohm @ 10V SUM 1 Channel Single Si P-Channel Enhancement 510 ns 870 ns 1 P-Channel MouseReel 145 ns 20 ns   MOSFET SMD/SMT Vishay Semiconductors 90 A 375 W TrenchFET -55 C TO-263-3 + 175 C 800 100 V 19 mOhms -20 V, + 20 V 1 V 217 nC 80 S
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