- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,418
In-stock
|
IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
|
|
122
In-stock
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
249
In-stock
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
526
In-stock
|
IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | |||
|
|
248
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
6,100
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement | TrenchP | ||||
|
|
58
In-stock
|
IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
|
|
181
In-stock
|
IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | - 4.5 V | 46 nC | Enhancement | TrenchP | |||
|
|
390
In-stock
|
IXYS | MOSFET 18 Amps 100V 0.12 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 4.5 V | 39 nC | Enhancement | TrenchP | ||||
|
|
32
In-stock
|
IXYS | MOSFET P-Channel: Standard MOSFET | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
110
In-stock
|
IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | ||||
|
|
140
In-stock
|
IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | ||||
|
|
90
In-stock
|
IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP |
