- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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188
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 75V 520A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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14
In-stock
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IXYS | MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 465 A | 1.3 mOhms | 4 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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24
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 500 A | 1.6 mOhms | 2.5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | |||
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16
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 520A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 235 A | 4.4 mOhms | 5 V | 715 nC | Enhancement | TrenchT2, GigaMOS, HiperFET |
