- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (2)
- 101 mOhms (1)
- 110 mOhms (1)
- 120 mOhms (1)
- 120 mOhms, 120 mOhms (1)
- 130 mOhms (1)
- 140 mOhms (1)
- 16 mOhms (2)
- 160 mOhms (1)
- 200 mOhms (2)
- 21 mOhms (2)
- 230 mOhms (2)
- 240 mOhms (1)
- 26 mOhms (1)
- 300 mOhms (2)
- 33 mOhms (1)
- 644 mOhms (1)
- 69 mOhms (1)
- 70 mOhms, 190 mOhms (1)
- 8 mOhms (1)
- 850 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,813
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
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1,439
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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1,856
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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3,942
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | SIPMOS | |||
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2,874
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
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2,406
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | |||
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3,825
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | |||
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1,693
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2 A | 70 mOhms, 190 mOhms | 1.2 V, - 2 V | 22.5 nC, 20 nC | Enhancement | SIPMOS | |||
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2,100
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.83 A | 230 mOhms | - 4 V | - 13 nC | Enhancement | SIPMOS | |||
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3,560
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -3.44A DSO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.44 A | 110 mOhms | - 4 V | 30 nC | Enhancement | SIPMOS | |||
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3,372
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 4.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.2 A | 850 mOhms | Enhancement | SIPMOS | |||||
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4,039
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -4A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4 A | 644 mOhms | - 4 V | 12 nC | Enhancement | SIPMOS | |||
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664
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 130 mOhms | - 21 nC | SIPMOS | |||||
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594
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 21A TO220FP-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 21 A | 100 mOhms | 2.1 V | - | Enhancement | SIPMOS | |||
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8,920
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement | SIPMOS | |||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||||
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1,011
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 8.8A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 300 mOhms | Enhancement | SIPMOS | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 18.6A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 101 mOhms | - 4 V | - 28 nC | Enhancement | SIPMOS | |||
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461
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 240 mOhms | 37 nC | Enhancement | SIPMOS | ||||
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557
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 3 A | 120 mOhms | 4 V | 3 nC | Enhancement | SIPMOS | |||
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319
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | |||||
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955
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 33 mOhms | Enhancement | SIPMOS | |||||
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GET PRICE |
4,990
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.6A SO-8 | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.6 A, 2.6 A | 120 mOhms, 120 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | SIPMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 26 mOhms | Enhancement | SIPMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 70A TO220-3 SIPMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 80A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | SIPMOS | |||||
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2,761
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | SIPMOS |
