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Packaging :
Vds - Drain-Source Breakdown Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STP34NM60ND
1+
$8.810
10+
$7.960
25+
$7.590
100+
$6.590
RFQ
996
In-stock
STMicroelectronics MOSFET N-Ch 600V 0.097 Ohm 29A Fdmesh II FD 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 29 A 110 mOhms   80.4 nC Enhancement
STW36NM60ND
1+
$8.200
10+
$7.410
25+
$7.070
100+
$6.140
RFQ
1,414
In-stock
STMicroelectronics MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A 25 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 29 A 110 mOhms 4 V 80.4 nC  
STB36NM60ND
1+
$6.060
10+
$5.150
100+
$4.470
250+
$4.240
1000+
$3.210
RFQ
359
In-stock
STMicroelectronics MOSFET Auto-grade N-CH 600V 29A FDmesh II 0.097 25 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 29 A 110 mOhms 4 V 80.4 nC  
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