- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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364
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 41mohm | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77 A | 41 mOhms | 2.5 V to 3.5 V | 285 nC | SuperFET II | ||||
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663
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 240 A | 2 mOhms | 3.7 V | 285 nC | StrongIRFET | ||||
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177
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 240 A | 2 mOhms | 3.7 V | 285 nC | Enhancement | StrongIRFET | |||
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360
In-stock
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Vishay Semiconductors | MOSFET 40V 120A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 0.0014 Ohms | 1.5 V | 285 nC | Enhancement | TrenchFET |
