- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,436
In-stock
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Diodes Incorporated | MOSFET Comp Pair Enh FET 30Vdss 20Vgss | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.2 A, 7.6 A | 35 mOhms, 41 mOhms | 1 V, - 1 V | 13.2 nC, 22 nC | Enhancement | ||||
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2,400
In-stock
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Diodes Incorporated | MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 5.5 A, - 5.8 A | 19 mOhms, 21 mOhms | 1 V, - 3 V | 13.2 nC, 22 nC | Enhancement |
