- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,600
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | ||||
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3,238
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | |||||
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GET PRICE |
7,500
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 195A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2 mOhms | 3.7 V | 186 nC | StrongIRFET | ||||
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845
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 195A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 195 A | 2 mOhms | 3.7 V | 186 nC | StrongIRFET | |||||
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369
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 A | 2.3 mOhms | - 3.1 V | 186 nC | Enhancement | OptiMOS | ||||
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10
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 25 A | 350 mOhms | 3 V | 186 nC | Enhancement |