- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,790
In-stock
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Diodes Incorporated | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 250 mA, 250 mA | 2.4 Ohms, 2.4 Ohms | 800 mV, 800 mV | 1.23 nC, 1.23 nC | Enhancement | |||
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57,260
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 10 V, 10 V | SMD/SMT | SOT-363-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 500 mA, 500 mA | 460 mOhms, 460 mOhms | 350 mV, 350 mV | 1.23 nC, 1.23 nC | Enhancement |
