- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,896
In-stock
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Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | NexFET | ||||
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7,865
In-stock
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Texas instruments | MOSFET 30V,N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | |||||
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827
In-stock
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Texas instruments | MOSFET P-Ch NexFET Power MOSFET | - 0.8 V | SMD/SMT | Picostar-3 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 149 mOhms | - 0.8 V | 1.04 nC | Enhancement |
