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- Rds On - Drain-Source Resistance :
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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,375
In-stock
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IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | ||||
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897
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 uOhms | 3 V | 305 nC | Enhancement | CoolIRFet | ||||
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2,376
In-stock
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IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | StrongIRFET | |||||||
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113
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | ||||
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372
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 523 A | 690 mOhms | 2.2 V | 305 nC | Enhancement | |||||
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57
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 37 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | ||||
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71
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 37 A | 290 mOhms | 4 V | 305 nC | Enhancement | POWER MOS 8 | |||||
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23
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 35 A | 380 mOhms | 4 V | 305 nC | Enhancement | |||||||
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VIEW | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 35 A | 320 mOhms | 2.5 V | 305 nC | Enhancement | ||||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 47 A | 210 mOhms | 4 V | 305 nC | Enhancement | |||||||
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25
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 49 A | 170 mOhms | 3 V | 305 nC | Enhancement | ||||||
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27
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 49 A | 190 mOhms | 4 V | 305 nC | Enhancement | |||||||
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9
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 37 A | 330 mOhms | 4 V | 305 nC | Enhancement |