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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC036NE7NS3 G
1+
$2.730
10+
$2.320
100+
$2.010
250+
$1.910
5000+
$1.320
RFQ
5,731
In-stock
Infineon Technologies MOSFET N-Ch 75V 100A TDSON-8 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 75 V 100 A 2.9 mOhms 2.3 V 63.4 nC Enhancement  
BSC036NE7NS3GATMA1
1+
$2.730
10+
$2.320
100+
$2.010
250+
$1.910
5000+
$1.320
RFQ
1,639
In-stock
Infineon Technologies MOSFET N-Ch 75V 100A TDSON-8 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 75 V 100 A 2.9 mOhms 2.3 V 63.4 nC Enhancement OptiMOS
TK3R1E04PL,S1X
1+
$1.740
10+
$1.400
100+
$1.120
500+
$0.984
RFQ
31
In-stock
Toshiba MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W 20 V Through Hole TO-220-3   + 175 C   1 Channel Si N-Channel 40 V 128 A 2.5 mOhms 1.4 V 63.4 nC Enhancement  
TK3R1A04PL,S4X
1+
$1.740
10+
$1.400
100+
$1.120
500+
$0.984
RFQ
50
In-stock
Toshiba MOSFET N-Ch 40V 4670pF 63.4nC 82A 36W 20 V Through Hole TO-220FP-3   + 175 C   1 Channel Si N-Channel 40 V 82 A 2.5 mOhms 1.4 V 63.4 nC Enhancement  
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