- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
923
In-stock
|
Fairchild Semiconductor | MOSFET 150V 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 26 mOhms | 2 V | 97 nC | Enhancement | PowerTrench | |||
|
|
11,900
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 76 A | 20 mOhms | 4.5 V | 97 nC | Enhancement | TrenchT2, HiperFET | ||||
|
|
76
In-stock
|
IXYS | MOSFET 15 Amps 1000V 0.76 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 760 mOhms | 6.5 V | 97 nC | Enhancement | Polar, HiPerFET | |||
|
|
45
In-stock
|
IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | 3 V to 6 V | 97 nC | Enhancement | HyperFET | |||
|
|
17
In-stock
|
IXYS | MOSFET 3 Phase Full Bridge | 20 V | SMD/SMT | SMD-24 | - 55 C | + 175 C | Reel | Si | N-Channel | 150 V | 50 A | 24 mOhms | 97 nC | ISOPLUS-DIL | ||||||
|
|
4,000
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 67 A | 9 mOhms | 97 nC | Enhancement | Directfet |
