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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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430
In-stock
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IXYS | MOSFET MOSFET 650V/150A Ultra Junction X2 | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 150 A | 17 mOhms | 2.7 V | 430 nC | Enhancement | ||||
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118
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 320 A | 3.5 mOhms | 4 V | 430 nC | Enhancement | TrenchT2, HiperFET | ||||
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170
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 320 A | 3.5 mOhms | 4 V | 430 nC | Enhancement | HiPerFET |
