Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
AUIRLS8409-7P
1+
$4.660
10+
$3.960
50+
$3.890
100+
$3.430
RFQ
466
In-stock
IR / Infineon MOSFET N-CHANNEL 30 / 40 16 V SMD/SMT TO-263-7 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 500 A 1.1 mOhms 1 V 177 nC Enhancement  
SPA17N80C3
GET PRICE
RFQ
50,000
In-stock
Infineon Technologies MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3 +/- 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 17 A 250 mOhms 2.1 V 177 nC Enhancement CoolMOS
17N80C3
GET PRICE
RFQ
50,000
In-stock
Infineon Technologies MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3 +/- 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 17 A 250 mOhms 2.1 V 177 nC Enhancement  
SPA17N80C3XKSA1
1+
$4.000
10+
$3.000
100+
$3.000
250+
$3.000
RFQ
50,000
In-stock
Infineon Technologies MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3 +/- 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 17 A 250 mOhms 2.1 V 177 nC Enhancement CoolMOS
Page 1 / 1