- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,694
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC | 20 V, 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37.8 A | 16 mOhms | 1.3 V | 25.1 nC | Enhancement | ||||
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7,939
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
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1,734
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.3 A | 8 mOhms | 1.3 V | 25.1 nC | Enhancement | ||||
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6,573
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF | 20 V, 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.8 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | PowerDI |
