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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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43
In-stock
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IXYS | MOSFET 100Amps 200V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 100 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | Linear L2 | ||||
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19
In-stock
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IXYS | MOSFET 75 Amps 600V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 30 mOhms | 3.9 V | 500 nC | Enhancement | CoolMOS | |||
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25
In-stock
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IXYS | MOSFET 85 Amps 600V 36 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 85 A | 30 mOhms | 4 V | 500 nC | Enhancement | CoolMOS | |||
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91
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 220 A | 6.3 mOhms | 5 V | 500 nC | Enhancement | GigaMOS, HiperFET | |||
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60
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 110 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | LinearL2 | ||||
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175
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 110 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | LinearL2 |
