- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10,520
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.1 A, 2.1 A | 58 mOhms, 58 mOhms | 700 mV, 700 mV | 2.1 nC, 2.1 nC | Enhancement | |||
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1,542
In-stock
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Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | |||
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11,908
In-stock
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Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.1 A, 2.1 A | 58 mOhms, 58 mOhms | 700 mV, 700 mV | 2.1 nC, 2.1 nC | Enhancement |
