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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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880
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | 1.2 V | 233 nC | Enhancement | OptiMOS | |||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | 1.2 V | 233 nC | Enhancement | ||||
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272
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.1 mOhms | 1.2 V | 233 nC | Enhancement | OptiMOS | |||
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30
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 175 V | 150 A | 9.7 mOhms | 2.5 V | 233 nC | Enhancement | Trench2, HiperFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.1 mOhms | 1.2 V | 233 nC | Enhancement |
