- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,024
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||
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19,130
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | ||||
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2,498
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 3.5 mOhms | - 1 V | 175 nC | Enhancement | |||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power M... | +/- 30 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 1050 V | 44 A | 0.1 Ohms | 3 V | 175 nC | Enhancement | ||||||
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384
In-stock
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IXYS | MOSFET -44 Amps -150V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | - 2 V to - 4 V | 175 nC | Enhancement |