- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,886
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.2 mOhms | 1.2 V | 196 nC | Enhancement | OptiMOS | ||||
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37
In-stock
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IXYS | MOSFET -18 Amps -600V 0.385 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 18 A | 385 mOhms | - 4 V | 196 nC | Enhancement | PolarP | |||||
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4
In-stock
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 2 V to - 4 V | 196 nC | ||||||||
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900
In-stock
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.2 mOhms | 1.2 V | 196 nC | Enhancement | OptiMOS | ||||
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VIEW | IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP |