- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,834
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 2.9 Ohms | 3 V | 12.5 nC | Enhancement | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | |||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 3.5 Ohms | 4 V | 12.5 nC | Enhancement | ||||
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1,508
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.5 A | 15 mOhms | 2.5 V | 12.5 nC | Enhancement | ||||
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5,423
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 1.5 V | 12.5 nC | Enhancement | ||||
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507
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | |||||
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1,500
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||
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2,415
In-stock
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Texas instruments | MOSFET 30V Sync Buck NexFET | 10 V | SMD/SMT | LSON-CLIP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 25 A | 9 mOhms, 2.8 mOhms | 2.1 V | 12.5 nC | NexFET |
