- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Infineon Technologies | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 62 mOhms, 62 mOhms | 2 V, 2 V | 11 nC, 11 nC | Enhancement | OptiMOS | |||
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VIEW | onsemi | MOSFET PCH+PCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 2.5 A, - 2.5 A | 194 mOhms, 194 mOhms | - 2.6 V, - 2.6 V | 11 nC, 11 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 62 mOhms, 62 mOhms | 2 V, 2 V | 11 nC, 11 nC | Enhancement | OptiMOS |
