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- Mounting Style :
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- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,973
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.7 mOhms | 2.5 V | 193 nC | Enhancement | ||||
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3,232
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.7 mOhms | 2.5 V | 193 nC | Enhancement | ||||
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512
In-stock
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STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | |||||
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726
In-stock
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STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | |||||
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1,982
In-stock
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STMicroelectronics | MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.5 mOhms | 2 V to 4 V | 193 nC | ||||||
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VIEW | IXYS | MOSFET 20 Amps 1200V 1 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 20 A | 570 mOhms | 6.5 V | 193 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET 20 Amps 1200V 0.6 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 20 A | 570 mOhms | 6.5 V | 193 nC | Enhancement | Polar, HiPerFET |