- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,581
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.4 A | 20 mOhms | 15.6 nC | |||||
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1,720
In-stock
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Nexperia | MOSFET PMN40UPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 37 mOhms | - 0.7 V | 15.6 nC | Enhancement | ||||
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VIEW | Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 12.4 A | 20 mOhms | 2.2 V | 15.6 nC | ||||
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VIEW | Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 12.4 A | 20 mOhms | 2.2 V | 15.6 nC |
