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Vgs - Gate-Source Voltage :
Package / Case :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPG20N04S4-09
1+
$1.150
10+
$0.981
100+
$0.753
500+
$0.666
5000+
$0.466
RFQ
1,652
In-stock
Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 20 V, 20 V SMD/SMT TDSON-8 - 55 C + 175 C Reel 2 Channel Si N-Channel 40 V, 40 V 20 A, 20 A 7.9 mOhms, 7.9 mOhms 2 V, 2 V 28 nC, 28 nC Enhancement OptiMOS
CSD87313DMS
1+
$1.710
10+
$1.460
100+
$1.170
500+
$1.020
2500+
$0.785
RFQ
2,500
In-stock
Texas instruments MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... +/- 10 V, +/- 10 V SMD/SMT WSON-8 - 55 C + 150 C Reel 2 Channel Si N-Channel 30 V, 30 V 17 A, 17 A 4.6 mOhms, 4.6 mOhms 0.6 V, 0.6 V 28 nC, 28 nC Enhancement  
CSD87313DMST
1+
$1.970
10+
$1.670
100+
$1.340
250+
$1.340
500+
$1.170
RFQ
250
In-stock
Texas instruments MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... +/- 10 V, +/- 10 V SMD/SMT WSON-8 - 55 C + 150 C Reel 2 Channel Si N-Channel 30 V, 30 V 17 A, 17 A 4.6 mOhms, 4.6 mOhms 0.6 V, 0.6 V 28 nC, 28 nC Enhancement  
IPG20N04S409ATMA1
5000+
$0.466
10000+
$0.449
25000+
$0.435
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 20 V, 20 V SMD/SMT TDSON-8 - 55 C + 175 C Reel 2 Channel Si N-Channel 40 V, 40 V 20 A, 20 A 7.9 mOhms, 7.9 mOhms 2 V, 2 V 28 nC, 28 nC Enhancement  
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