- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,001
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 TO220 104mohm FRFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 104 mOhms | 5 V | 145 nC | SuperFET II FRFET | |||||
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VIEW | IXYS | MOSFET 360 Amps 100V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 29 A | 2.6 mOhms | 4.5 V | 145 nC | Enhancement | ||||
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651
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | 145 nC | Enhancement | |||||
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3,500
In-stock
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IXYS | MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 5 V | 145 nC | HyperFET | ||||||
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226
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
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60
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | |||||||
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GET PRICE |
800
In-stock
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Vishay Semiconductors | MOSFET 40V 100A 157W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.00225 Ohms | 2.5 V | 145 nC | Enhancement | TrenchFET | ||
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68
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
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58
In-stock
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IXYS | MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 5 V | 145 nC | HyperFET | ||||||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | |||||||
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32
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 94 mOhms | 145 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT | |||
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104
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 14 A | 870 mOhms | 4 V | 145 nC | Enhancement | POWER MOS 8 | |||||
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54
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 14 A | 910 mOhms | 4 V | 145 nC | Enhancement | POWER MOS 8 | ||||
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88
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 14 A | 910 mOhms | 2.5 V | 145 nC | Enhancement | |||||
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78
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 37 A | 130 mOhms | 4 V | 145 nC | Enhancement | POWER MOS 8 | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 119 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT | |||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 48 A | 0.023 Ohms | - 3.5 V | 145 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET P-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 0.0078 Ohms | - 2.5 V | 145 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement |
